Michael Tkachuk, Ph.D.

Education and Training

Ph.D. in Physics, Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia

M.S. Optoelectronics, Saint Petersburg State Electrotechnical University, St. Petersburg, Russia

Research and Professional Experience

2005 – present, Vice President of research and development, BAH Holdings, LLC, Glen Cove, NY

2002 – 2007, Leader of optical development group, Scientific Research Institute “Giricond”, St. Petersburg, Russia

1978-2007, Scientist, Ioffe Physical-Technical Institute of Russian Academy of Sciences, Laboratory of Solid State Physics, St. Petersburg, Russia

Publications:

  1. Astakhov, G.V., R.I. Dzhioev, K.V. Kavokin, V.L. Korenev, M.V. Lazarev, M.N. Tkachuk, Y.G. Kusrayev, T. Kiessling, W. Ossau, and L.W. Molenkamp, “Suppression of electron spin relaxation in Mn-doped GaAs.” Physical Review Letters, 2008. 101(7).
  2. Kotlikov, E.N., B.N. Gumenik, V.A. Ivanov, E.V. Khonineva, V.N. Prokashev, M.N. Tkachuk, and A.N. Tropin, Film’s forming materials for laser optics – art. no. 65961H, in Advanced Optical Materials, Technologies, and Devices, S. Asmontas and J. Gradauskas, Editors. 2007. p. H5961-H5961.
  3. Kotlikov, E.N., B.N. Gumenik, V.A. Ivanov, E.V. Khonineva, V.N. Prokashev, M.N. Tkachuk, and A.N. Tropin, “Film’s forming materials for laser optics.” Proceedings of the SPIE – The International Society for Optical Engineering, 2006. 6596: p. 65961H-1-5.
  4. Dzhioev, R.I., B.P. Zakharchenya, M.V. Lazarev, and M.N. Tkachuk, “Electron spin filtering in the GaAs/AlGaAs interface space charge field.” Physics of the Solid State, 2005. 47(8): p. 1584-1589.
  5. Andrianov, A.V., V.Y. Nekrasov, N.M. Shmidt, E.E. Zavarin, A.S. Usikov, N.N. Zinov’ev, and M.N. Tkachuk, “Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells.” Semiconductors (Translation of Fizika i Tekhnika Poluprovodnikov (Sankt-Peterburg)), 2002. 36(6): p. 641-646.
  6. Korenev, V.L., R.I. Dzhioev, M.V. Lazarev, M.N. Tkachuk, and B.P. Zakharchenya, Fine structure of excitons and the Overhauser effect in quantum dots. Optical Properties of Semiconductor Nanostructures, ed. M.L. Sadowski, M. Potemski, and M. Grynberg. Vol. 81. 2000. 431-434.
  7. Kalevich, V.K., M.N. Tkachuk, P. Le Jeune, X. Marie, and T. Amand, “Electron spin beats in InGaAs GaAs quantum dots.” Physics of the Solid State, 1999. 41(5): p. 789-792.
  8. Dzhioev, R.I., B.P. Zakharchenya, V.L. Korenev, P.E. Pak, M.N. Tkachuk, D.A. Vinokurov, and I.S. Tarasov, “Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands.” Jetp Letters, 1998. 68(9): p. 745-749.
  9. Dzhioev, R.I., H.M. Gibbs, E.L. Ivchenko, G. Khitrova, V.L. Korenev, M.N. Tkachuk, and B.P. Zakharchenya, Exciton orientation-to-alignment convertion in Type-II GaAs/AlAs superlattices, in Compound Semiconductors 1996, M.S. Shur and R.A. Suris, Editors. 1997. p. 173-176.
  10. Dzhioev, R.I., H.M. Gibbs, E.L. Ivchenko, G. Khitrova, V.L. Korenev, M.N. Tkachuk, and B.P. Zakharchenya, “Determination of interface preference by observation of linear-to-circular polarization conversion under optical orientation of excitons in type-II GaAs/AlAs superlattices.” Physical Review B, 1997. 56(20): p. 13405-13413.

Patents

  1. Tkachuk, M., Patent US7570360, Optical Absorption Spectrometer and Method for Ming Concentration of a Substance, (Aug 4, 2009).
  2. Tkachuk, M., Patent Application US20130037854, Photodetector (Aug 10, 2011).
  3. Tkachuk M., Suchalkin, S., Patent Application US 14/268320, Opto-pair with improved temperature stability for methane detection (detection (May 2, 2014).
  4. Tkachuk M., Patent US7796265, Optical absorption gas analyser, (Sept 14, 2010).
  5. Tkachuk M., Patent US8665424, Optical absorption gas analyser (March 4, 2014).